1/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b abbreviated symbol : z7 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) umz7n rohm : umt6 eiaj : sc-88 abbreviated symbol : z7 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 emz7 rohm : emt6 general purpose transistor (dual transistors) emz7 / umz7n ? features ? dimensions (unit : mm) 1) both a 2sa2018 chip and 2sc5585 chip in a emt or umt package. 2) mounting possible with emt3 or umt3 automatic mounting machines. 3) transistor elements are independent, eliminating interference. 4) mounting cost and area can be cut in half. 5) low v ce(sat) ? structure npn / pnp epitaxial planar silicon transistor ? inner circuit tr 2 tr 1 (3) emz7 / umz7n (2) (1) (4) (5) (6) ? absolute maximum ratings (ta=25 ?c) parameter symbol limits unit tr 1 tr 2 v cbo ?15 15 v v ceo ?12 12 v v ebo ?6 6 v i c i cp ?500 500 ma ?1 1 a tj 150 c tstg ?55 to +150 c p c 150(total) mw ? 1 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded.
2/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n ? electrical characteristics (ta=25 ?c) tr 1 (npn) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) f t cob min. 15 12 6 ? ? 270 ? ? ? ? ? ? ? ? ? 320 7.5 ? ? ? 0.1 0.1 90 680 250 ? ? vi c = 10a i c = 1ma i e = 10a v cb = 15v v eb = 6v v ce /i c = 2v/10ma v ce = 2v, i c = ?10ma, f = 100mhz i c /i b = 200ma /10ma v cb = 10v, i e = 0a, f = 1mhz v v a a ? mv mhz pf typ. max. unit conditions collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance tr 2 (pnp) symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce (sat) f t cob min. ?15 ?12 ?6 ? ? 270 ? ? ? i c = ?10a i c = ?1ma i e = ?10a v cb = ?15v v eb = ?6v v ce /i c = ?2v/?10ma v ce = ?2v, i c = 10ma, f = 100mhz i c /i b = ?200ma/?10ma v cb = ?10v, i e = 0a, f = 1mhz ? ? ? ? ? ? 260 ?100 6.5 typ. ? ? ? ?0.1 ?0.1 680 ?250 ? ? max. v v v a a ? mv mhz pf unit conditions parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio collector-emitter saturation voltage transition frequency output capacitance ? packaging specifications umz7n emz7 tr 3000 ? t2r 8000 ? taping part no. packaging type code basic ordering unit (pieces)
3/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n ? electrical characteristic curves tr 1 (npn) 0 1 10 base to emitter voltage : v be (v) fig.1 grounded emitter propagation characteristics collector current : i c (ma) 100 0.5 1.0 1.5 v ce =2v 1000 ta = 1 25 c 25 c ? 40 c 2 5 20 50 200 500 1 2 5 10 20 50 100 200 500 collector current : i c (ma) fig.2 dc current gain vs. collector current 10 dc current gain : h fe 1000 20 50 100 200 500 1000 ta= 1 25c 5 2 1 v ce =2v 25c ?40c 1 2 5 10 20 50 100 200 i c /i b =20 1 2 5 10 20 50 100 200 5001000 collector saturation voltage : v ce (sat) (mv) ta = 1 25c 500 1000 25c ?40c collector current : i c (ma) fig.3 collector-emitter saturation voltage vs. collector current ( ) collector saturation voltage : v ce (sat) ( v) 1 2 5 10 20 50 100 200 ta=25c 1 2 5 10 20 50 100 200 5001000 collector current : i c (ma) i c /i b = 50 500 1000 20 10 fig.4 collector-emitter saturation voltage vs. collector current ( ) 10 20 50 100 200 500 1000 2000 i c /i b = 20 1 2 5 10 20 50 100 200 5001000 base saturation voltage : v be (sat) (mv) ta=? 40 c 5000 10000 25c 125c collector current : i c (ma) fig.5 base-emitter saturation voltage vs. collector current 2 1 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 500 1000 ta = 25?c v ce= 2v f t ( mh z) collector to base voltage : v cb (v) pulsed fig.6 collector output capacitance emitter input capacitance vs. base voltage 0.20.1 0.5 1 2 5 10 20 50 100 1 2 5 10 20 50 100 200 500 1000 ta = 25c i e= 0a f = 1mhz emitter input capacitance : cib (pf) collector output capacitance : cob (pf) emitter to base voltage : v eb (v) cib cob fig.7 collector output capacitance vs collector-base voltage emitter input capacitance vs emitter-base voltage
4/4 www.rohm.com c 2012 rohm co., ltd. all rights reserved. 2012.06 - rev.b data sheet emz7 / umz7n tr 2 (pnp) 0 1 2 5 20 50 100 200 500 1000 10 base to emitter voltage : v be (v) fig.8 grounded emitter propagation characteristics collector current : i c (ma) 1.5 1.0 0.5 v ce =2v ta=125?c ta=25?c ta= -40?c 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.9 dc current gain vs. collector current 1 dc current gain : h fe 500 2 5 10 200 500 1000 20 50 100 ta=25c ta= ?40c ta=125c v ce =2v 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.10 collector-emitter saturation voltage vs. collector current ( ) 1 collector saturation voltage : v ce (sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta=25 c ta= ?40 c ta=125 c i c /i b =20 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.11 collector-emitter saturation voltage vs. collector current 1 collector saturation voltage : v ce (sat) (mv) 500 2 5 10 200 500 1000 20 50 100 ta=25c i c / i b =50 i c / i b =20 i c / i b =10 1 2 5 10 20 50 100 200 1000 collector current : i c (ma) fig.12 base-emitter saturation voltage vs. collector current 10 baser saturation voltage : v be (sat) (mv) 500 20 50 100 2000 5000 10000 200 500 1000 ta=25c ta= ?40c ta=125c i c /i b =20 1 2 5 10 20 50 100 200 1000 emitter current : i c (ma) fig.13 gain bandwidth product vs. emitter current 1 transition frequency : f t (mhz) 500 2 5 10 200 500 1000 20 50 100 v ce =2v ta=25c 0.2 0.5 1 2 5 10 20 50 100 0.1 1 2 5 10 20 50 100 200 500 1000 ta = 25c f = 1mhz i e = 0a emitter input capacitance : cib(f) emitter to base voltage : v eb ( v) fig.14 collector output capacitance vs. collector-base voltage emitter input capacitance vs. emitter-base voltage cib cob collector output capacitance : cob (pf)
r1120a www.rohm.com ? 2012 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes no copying or reproduction of this document, in part or in whole, is permitted without the consent of rohm co.,ltd. the content specified herein is subject to change for improvement without notice. the content specified herein is for the purpose of introducing rohm's products (hereinafter "products"). if you wish to use any such product, please be sure to refer to the specifications, which can be obtained from rohm upon request. examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when design ing circuits for mass production. great care was taken in ensuring the accuracy of the information specified in this document. however, should you incur any damage arising from any inaccuracy or misprint of such information, rohm shall bear no responsibility for such damage. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the produc ts. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm and other parties. rohm shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. the products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, commu- nication devices, electronic appliances and amusement devices). the products specified in this document are not designed to be radiation tolerant. while rohm always makes efforts to enhance the quality and reliability of its products, a product may fail or malfunction for a variety of reasons. please be sure to implement in your equipment using the products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any product, such as derating, redundancy, fire control and fail-safe designs. rohm shall bear no responsibility whatsoever for your use of any product outside of the prescribed scope or not in accordance with the instruction manual. the products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel- controller or other safety device). rohm shall bear no responsibility in any way for use of any of the products for the above special purposes. if a product is intended to be used for any such special purpose, please contact a rohm sales representative before purchasing. if you intend to export or ship overseas any product or technology specified herein that may be controlled under the foreign exchange and the foreign trade law, you will be required to obtain a license or permit under the law.
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